Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer deposition
US9916974B2 · kind B2 · utility
1Cited by
1References
16Claims
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Key dates
| Filing date | Jun 4, 2015 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Jun 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si—N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si—N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.