Method for fabricating a Fin field effect transistor (FinFET)
US9916978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2016 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Jun 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for fabricating a fin field effect transistor (FinFET), comprising: providing a substrate having a logic region and a large region; forming a plurality of fin structures in the logic region by removing a portion of the substrate in the logic region; forming an oxide layer on the substrate filling in-between the fin structures in the logic region; forming an first epitaxial structure in the large region by removing a portion of the substrate in the large region; exposing a portion of the fin structures and a portion of the epitaxial structure by removing a portion of the oxide layer; and forming a gate electrode on portions of the fin structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.