Methods of forming a through-substrate-via (TSV) and a metallization layer after formation of a semiconductor device
US9917009B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2016 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Aug 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed includes, among other things, forming a semiconductor device above a semiconducting substrate, forming a device level contact to the semiconductor device and, after forming the device level contact, performing at least one common process operation so as to form a through-substrate-via (TSV) in a trench in the substrate, a TSV contact structure that is conductively coupled to the TSV and a conductive metallization element that is conductively coupled to the device level contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.