Diffusion break forming after source/drain forming and related IC structure
US9917103B1 · kind B1 · utility
15Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2017 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Jan 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a diffusion break are disclosed. The method includes forming a diffusion break after source/drain formation, by removing a gate stack of the dummy gate to a buried insulator of an SOI substrate, creating a first opening; and filling the first opening with a dielectric to form the diffusion break. An IC structure includes the diffusion break in contact with an upper surface of the buried insulator. In an optional embodiment, the method may also include simultaneously forming an isolation in an active gate to an STI in the SOI substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.