Semiconductor device
US9917182B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2017 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Feb 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
Abstract
A semiconductor device includes: a first nitride semiconductor layer, a second nitride semiconductor layer that is provided on the first nitride semiconductor layer and has a band gap larger than a band gap of the first nitride semiconductor layer, a gate electrode that is provided on the first nitride semiconductor layer, a first electrode that is electrically connected to the first nitride semiconductor layer, a second electrode disposed such that the gate electrode is positioned between the first electrode and the second electrode, and electrically connected to the first nitride semiconductor layer, and a first insulation layer that is provided between the gate electrode and the second electrode, disposed such that the second nitride semiconductor layer is positioned between the first nitride semiconductor layer and the first insulation layer, and including silicon oxide having an oxygen-to-silicon atomic ratio (O/Si) of 1.50 or more and 1.85 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.