Semiconductor device with control structure including buried portions and method of manufacturing

US9917186B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Matteo Dainese · Munich, DE
• Peter Lechner · Vaterstetten, DE
• Roman Baburske · Otterfing, DE

Key dates

• Filing date: Dec 29, 2016
• Grant date: Mar 13, 2018
• Expiry date: Dec 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes transistor cells and control structures. The transistor cells include source zones of a first conductivity type and body zones of a second conductivity type. The source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body. The control structures include first portions extending from a first surface into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions between the first portions and separated from the first surface by portions of the semiconductor mesa, and third portions connecting the first and the second portions and separated from the first surface by portions of the semiconductor mesa. Constricted sections of the semiconductor mesa separate third portions neighboring each other along a horizontal longitudinal extension of the semiconductor mesa.