Power supply system, plasma etching apparatus, and plasma etching method
US9922802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2013 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Feb 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2242/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a DC power supply 91 that supplies a DC voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the DC power supply 91 including a first DC power supply unit 101 that supplies a first negative DC voltage V1, a second DC power supply unit 102 that supplies a second negative DC voltage V2 having a higher absolute value than the first negative DC voltage V1, and a selecting circuit 103 that selectively connects the first DC power supply unit 101 and the second DC power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first DC power supply unit 101 and the selecting circuit 103.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.