Method for performing direct bonding between two structures

US9922954B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Hubert Moriceau · Saint-Égrève, FR
• Frank Fournel · Meylan, FR
• Christophe Morales · Le Pont-de-Claix, FR

Key dates

• Filing date: Dec 22, 2016
• Grant date: Mar 20, 2018
• Expiry date: Dec 22, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/05442
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10−2 mbar.