Integrated circuit device and method of manufacturing the same
US9922979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2016 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Feb 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0179
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.