Patent · US Active

Semiconductor wafer and a method for producing the semiconductor wafer

US9923050B2 · kind B2 · utility

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12Claims

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Assignees

Siltronic AG · DE
IMEC VZW · BE

Inventors

Sarad Bahadur Thapa · Burghausen, DE
Ming Zhao · Beijing, CN
Peter Storck · Mehring, DE
Norbert Werner · Dodge City, US

Key dates

Filing date	Sep 11, 2014
Grant date	Mar 20, 2018
Priority date	—
Expiry date	Sep 11, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor wafer has a silicon single crystal substrate having a top surface and a stack of layers covering the top surface, the stack of layers containing an AlN nucleation layer covering the top surface of the silicon single crystal substrate, wherein the top surface of the silicon single crystal substrate has a crystal lattice orientation which is off-oriented with respect to the {111}-plane, the normal to the top surface being inclined with respect to the <111>-direction toward the <11-2>-direction by an angle θ of not less than 0.3° and not more than 6°, the azimuthal tolerance of the inclination being ±0.1°; and an AlGaN buffer layer which covers the AlN nucleation layer and contains one or more AlxGa1-xN layers, wherein 0<×<1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.