Selective process for source and drain formation

US9923081B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Xinyu BAO · Mountain View, US
• Zhiyuan Ye · San Jose, US
• Flora Fong-Song CHANG · Saratoga, US
• Abhishek Dube · Fishkill, US
• Xuebin Li · Santa Clara, US
• Errol Antonio C. Sanchez · Tracy, US
• Hua Chung · San Jose, US
• Schubert S. Chu · San Francisco, US

Key dates

• Filing date: Apr 4, 2017
• Grant date: Mar 20, 2018
• Expiry date: Apr 4, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/258
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.