Processing of a direct-bandgap chip after bonding to a silicon photonic device
US9923105B2 · kind B2 · utility
5Cited by
89References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 8, 2014 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Nov 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a chip bonded in the platform. The chip is processed comprising patterning, etching, deposition, and/or other processing steps while the chip is bonded to the platform. The chip is used as a gain medium and the platform is at least partially made of silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.