Patent · US Active

TFD I/O partition for high-speed, high-density applications

US9928883B2 · kind B2 · utility

0Cited by
145References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 15, 2017
Grant dateMar 27, 2018
Priority date
Expiry dateMay 15, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18165
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A microelectronic package can include a substrate having first and second surfaces, first, second, and third microelectronic elements each having a surface facing the first surface, terminals exposed at the second surface, and leads electrically connected between contacts of each microelectronic element and the terminals. The substrate can have first, second, and third spaced-apart apertures having first, second, and third parallel axes extending in directions of the lengths of the apertures. The contacts of the first, second, and third microelectronic elements can be aligned with one of the first, second, or third apertures. The terminals can include first and second sets of first terminals configured to carry address information. The first set can be connected with the first and third microelectronic elements and not with the second microelectronic element, and the second set can be connected with the second microelectronic element and not with the first or third microelectronic elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.