High efficiency apparatus and method for depositing a layer on a three dimensional structure
US9929015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2014 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a processing apparatus may include a process chamber configured to house a substrate and a hybrid source assembly that includes a gas channel coupled to a molecular source; and a plasma chamber configured to generate a plasma and isolated from the gas channel. The processing apparatus may also include an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to direct an ion beam to a substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; and configured to direct a molecular beam comprising molecular species received from the gas channel to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.