Patent · US Active

Semiconductor wafer and method for producing same

US9929018B2 · kind B2 · utility

0Cited by

1References

7Claims

0Family size

Assignee

DISCO CORPORATION · JP

Inventors

Florian Bieck · Singapore, SG
Carolinda Sukmadevi Asfhandy · Singapore, SG
Sven-Manfred Spiller · Hannover, DE

Key dates

Filing date	Feb 28, 2015
Grant date	Mar 27, 2018
Priority date	—
Expiry date	Apr 17, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/78
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor wafer (12) with a thinned central portion (2) has a first side (3) and a second side (4) and at least one reinforcement structure for increasing the radial bending resistance of the semiconductor wafer (12). The reinforcement structure provides at least one passage (10) for a fluid flow between an inner face (9) of said one reinforcement structure towards an outer face (8) of the reinforcement structure. The passages (10) are manufactured in a z-direction coming from above the semiconductor wafer (12) in a direction which is essentially perpendicular to the surface, e.g. to the first side (3), of the semiconductor wafer (12).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.