Patent · US Active

Method for manufacture of a semiconductor wafer suitable for the manufacture of an SOI substrate, and SOI substrate wafer thus obtained

US9929039B2 · kind B2 · utility

2Cited by

1References

18Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Didier Dutartre · Meylan, FR
Herve Jaouen · Meylan, FR

Key dates

Filing date	Mar 27, 2015
Grant date	Mar 27, 2018
Priority date	—
Expiry date	Mar 27, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/40
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor wafer suitable for fabricating an SOI substrate is provided by: producing a first layer of polycrystalline semiconductor on a top side of a semiconductor carrier; then forming an interface zone on a top side of the first layer, wherein the interface zone has a structure different from a crystal structure of the first layer; and then producing a second layer of polycrystalline semiconductor on the interface zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.