Patent · US Active

Semiconductor device including buried capacitive structures and a method of forming the same

US9929148B1 · kind B1 · utility

6Cited by

1References

16Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Peter Baars · Dresden, DE
Frank Jakubowski · Dresden, DE

Key dates

Filing date	Feb 22, 2017
Grant date	Mar 27, 2018
Priority date	—
Expiry date	Feb 22, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure provides semiconductor devices and manufacturing techniques in which a buried capacitive structure may be provided at the level of the buried insulating layer of an SOI device, thereby providing reduced process complexity compared to conventional strategies, while still preserving superior routing capabilities above the buried capacitive structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.