Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins
US9929159B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 25, 2016 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Feb 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one method, apparatus and system disclosed involves forming a finFET device having silicon and silicon germanium fins. The method includes: forming an n-doped and a p-doped region in a semiconductor wafer; forming a layer of silicon above both the those regions; removing a portion of the silicon layer above the p-doped region to create a first recess; forming a layer of silicon germanium in the first recess; etching away at least a portion of the silicon layer and the underlying p-doped region; etching away at least a portion of the silicon germanium layer and the underlying n-doped region; forming fins from the unetched silicon and silicon germanium layers; and forming a shallow trench isolation dielectric in the etched away portion of the silicon layer and the underlying p-doped region and in the etched away portion of the silicon germanium layer and the underlying n-doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.