Semiconductor device and method for forming the same
US9929162B1 · kind B1 · utility
7Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | Mar 12, 2017 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Mar 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
Abstract
A semiconductor device include a substrate including at least a memory cell region formed thereon, an isolation mesh formed on the substrate; and a plurality of storage node contact plugs. The semiconductor device includes a plurality of memory cells formed in the memory cell region. The isolation mesh includes a plurality of essentially homogeneous dielectric sidewalls and a plurality of first apertures defined by the dielectric sidewalls. The storage node contact plugs are respectively formed in the first apertures, and electrically connected to the memory cells respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.