Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
US9929310B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2013 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.