Semiconductor light emitting element and method for producing the same
US9929311B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 16, 2014 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jul 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting element with a design wavelength of λ, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength λ satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength λ becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.