Salicide bottom contacts
US9934977B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2017 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Jan 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a contact to a semiconductor device that includes forming a vertically orientated channel region on semiconductor material layer of a substrate; and forming a first source/drain region in the semiconductor material layer. The method may continue with forming a metal semiconductor alloy contact on the first source/drain region extending along a horizontally orientated upper surface of the first source/drain region that is substantially perpendicular to the vertically orientated channel region, wherein the metal semiconductor alloy contact extends substantially to an interface with the vertically orientated channel region. Thereafter, a gate structure is formed on the vertically orientated channel region, and a second source/drain region is formed on the vertically orientated channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.