Techniques for processing substrates using directional reactive ion etching
US9934981B2 · kind B2 · utility
2Cited by
5References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 31, 2014 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Nov 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species where the substrate includes a surface feature. At least one surface of the surface feature is etched using the ions in combination with the reactive ambient at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.