Bonding structures and methods forming the same
US9935047B2 · kind B2 · utility
4Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2015 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Oct 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a first dielectric layer over a conductive pad, forming a second dielectric layer over the first dielectric layer, and etching the second dielectric layer to form a first opening, with a top surface of the first dielectric layer exposed to the first opening. A template layer is formed to fill the first opening. A second opening is then formed in the template layer and the first dielectric layer, with a top surface of the conductive pad exposed to the second opening. A conductive pillar is formed in the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.