Multi-level metallization interconnect structure
US9935051B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2016 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Aug 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is provided that includes a contact structure containing a gouged upper surface embedded in at least a middle-of-the-line (MOL) dielectric material, wherein the contact structure contacts an underlying doped semiconductor material structure. A first metallization structure containing a gouged upper surface is in contact with the gouged upper surface of the contact structure and embedded in a first interconnect dielectric material. A second metallization structure is in contact with the gouged upper surface of the first metallization structure and embedded at least within a second interconnect dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.