Patent · US Active

Methods for detecting endpoint for through-silicon via reveal applications

US9941178B2 · kind B2 · utility

0Cited by
2References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 16, 2016
Grant dateApr 10, 2018
Priority date
Expiry dateNov 16, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/12
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Systems and methods for processing a semiconductor wafer includes a plasma processing chamber. The plasma processing chamber includes an exterior, an interior region with a wafer receiving mechanism and a viewport disposed on a sidewall of the plasma processing chamber providing visual access from the exterior to the wafer received on the wafer receiving mechanism. A camera is mounted to the viewport of the plasma processing chamber on the exterior and coupled to an image processor. The image processor includes pattern recognition logic to match images of emerging pattern captured and transmitted by the camera, to a reference pattern and to generate signal defining an endpoint when a match is detected. A system process controller coupled to the image processor and the plasma processing chamber receives the signal from the image processor and adjusts controls of one or more resources to stop the etching operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.