Three-dimensional ferroelectric memory device and method of making thereof
US9941299B1 · kind B1 · utility
62Cited by
3References
19Claims
0Family size
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Key dates
| Filing date | May 24, 2017 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | May 24, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2275
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three-dimensional memory device includes an alternating stack of word lines and insulating layers, vertical semiconductor channels vertically extending through the alternating stack, and a ferroelectric memory material located between each vertical semiconductor channel and the word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.