Device with sub-minimum pitch and method of making
US9941331B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2017 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jan 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided that includes forming a first level above a substrate, forming a second level above the first level, and forming a third level above the second level. The first level includes a plurality of first elements having a first minimum pitch, the second level includes a plurality of second elements having a second minimum pitch greater than the first minimum pitch, and the third level includes a plurality of third elements having a third minimum pitch greater than the first minimum pitch. The second elements are disposed above and aligned with a first plurality of the first elements, and the third elements are disposed above and aligned with a second plurality of the first elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.