Patent · US Active

Method for manufacturing a semiconductor device having silicide layers

US9941375B2 · kind B2 · utility

0Cited by

3References

7Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Rolf Weis · Dresden, DE
Martin Bartels · Dresden, DE
Marko Lemke · Dresden, DE
Stefan Tegen · Dresden, DE

Key dates

Filing date	Jan 27, 2017
Grant date	Apr 10, 2018
Priority date	—
Expiry date	Jan 27, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/28518
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a semiconductor device includes providing a semiconductor substrate having a first side. A trench having a bottom is formed. The trench separates a first mesa region from a second mesa region formed in the semiconductor substrate. The trench is filled with an insulating material, and the second mesa region is removed relative to the insulating material filled in the trench to form a recess in the semiconductor substrate. In a common process, a first silicide layer is formed on and in contact with a top region of the first mesa region at the first side of the semiconductor substrate and a second silicide layer is formed on and in contact with the bottom of the recess.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.