Semiconductor devices and methods for forming a semiconductor device
US9941402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2017 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jun 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a guard structure located laterally between first and second active areas of a semiconductor substrate. The guard structure includes a first doping region at a front side surface of the substrate and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. The common doping region extends from a backside surface of the substrate to at least a part of the front side surface in contact with the wiring structure. An edge termination doping region laterally surrounds the first and second active areas. The edge termination doping region and the first doping region have a first conductivity type, and the common doping region has a second conductivity type. A resistive connection between the edge termination doping region and the first doping region is present at least during reverse operating conditions of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.