Photoactive devices and materials

US9941425B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Tom E. Blomberg · Vantaa, FI
• Hannu Huotari · Espoo, FI

Key dates

• Filing date: Oct 16, 2015
• Grant date: Apr 10, 2018
• Expiry date: Oct 16, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.