Magnetoresistance effect element and magnetic memory device
US9941468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2015 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jul 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element (100) includes a heavy metal layer (11) that includes a heavy metal and that is formed to extend in a first direction, a recording layer (12) that includes a ferromagnetic material and that is provided adjacent to the heavy metal layer (11), a barrier layer (13) that includes an insulating material and that is provided on the recording layer (12) with being adjacent to a surface of the recording layer (12) opposite to the heavy metal layer (11), and a reference layer (14) that includes a ferromagnetic material and that is provided adjacent to a surface of the barrier layer (13), the surface being opposite to the recording layer (12). The direction of the magnetization of the reference layer (14) has a component substantially fixed in the first direction, and the direction of the magnetization of the recording layer (12) has a component variable in the first direction. A current having a direction same as the first direction is introduced to the heavy metal layer (11) to thereby enable the magnetization of the recording layer (12) to be inverted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.