Semiconductor integrated circuit device with a surface and method of manufacturing the same
US9947546B2 · kind B2 · utility
0Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Apr 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.