Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell
US9947590B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Oct 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one method, apparatus and system disclosed involves providing an integrated circuit having metal feature flyover over an middle-of-line (MOL) feature. A first location for a non-contact intersection region between a first middle of line (MOL) interconnect feature and a metal feature in a functional cell is determined. A dielectric feature is formed over the first MOL interconnect feature at the first location. The metal feature is formed over the dielectric layer, the dielectric layer providing a predetermined amount of voltage isolation between the first MOL interconnect feature and the metal feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.