Patent · US Active

Method, apparatus, and system for using a cover mask for enabling metal line jumping over MOL features in a standard cell

US9947590B1 · kind B1 · utility

2Cited by
8References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 14, 2016
Grant dateApr 17, 2018
Priority date
Expiry dateOct 14, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/811
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

At least one method, apparatus and system disclosed involves providing an integrated circuit having metal feature flyover over an middle-of-line (MOL) feature. A first location for a non-contact intersection region between a first middle of line (MOL) interconnect feature and a metal feature in a functional cell is determined. A dielectric feature is formed over the first MOL interconnect feature at the first location. The metal feature is formed over the dielectric layer, the dielectric layer providing a predetermined amount of voltage isolation between the first MOL interconnect feature and the metal feature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.