High power MMIC devices having bypassed gate transistors
US9947616B2 · kind B2 · utility
8Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2017 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | May 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.