Patent · US Active

Device and method for permanent bonding

US9947638B2 · kind B2 · utility

2Cited by
3References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 22, 2015
Grant dateApr 17, 2018
Priority date
Expiry dateApr 22, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/20108
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method and corresponding device for permanent bonding of a first layer of a first substrate to a second layer of a second substrate on a bond interface, characterized in that a dislocation density of a dislocation of the first and/or second layer is increased at least in the region of the bond interface before and/or during the bonding.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.