Semiconductor device and method for fabricating the same
US9947792B2 · kind B2 · utility
2Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2015 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | May 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first fin-shaped structure thereon; forming a spacer adjacent to the first fin-shaped structure; using the spacer as mask to remove part of the substrate for forming a second fin-shaped structure, in which the second fin-shaped structure comprises a top portion and a bottom portion; and forming a doped portion in the bottom portion of the second fin-shaped structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.