Light emitting diode device having III-nitride nanowires, a shell layer and a continuous layer

US9947831B2 · kind B2 · utility

Assignee

• QUNANO AB · SE

Inventors

• Werner Seifert · Bargteheide, DE
• Damir Asoli · Malmö, SE
• Zhaoxia Bi · Lund, SE
• Jonas Ohlsson · Malmö, SE
• Lars Samuelson · Malmö, SE

Key dates

• Filing date: Apr 21, 2017
• Grant date: Apr 17, 2018
• Expiry date: Apr 21, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/932
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires, a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer, and a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer. The at least one Group III-nitride pyramidal shell layer is located in an active region of the LED. The plurality of Group III-nitride nanowires are doped one of n- or p-type. The continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires. A distance from a side portion of the continuous contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of an apex of the continuous contact layer to the plurality of Group III-nitride nanowires.