Magnetoresistive memory device
US9947862B2 · kind B2 · utility
13Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Sep 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetoresistive memory device includes a first magnetic layer in which a magnetization direction is variable, a first nonmagnetic layer provided on the first magnetic layer, a second magnetic layer provided on the first nonmagnetic layer, a magnetization direction of the second magnetic layer being invariable, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer includes Mo.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.