Device structures with multiple nitrided layers
US9953831B1 · kind B1 · utility
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18Claims
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Key dates
| Filing date | Dec 21, 2016 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Dec 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/314
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Device structures for field-effect transistors and methods of forming device structures for a field-effect transistor. A first dielectric layer is formed on a semiconductor layer and nitrided. A nitrogen-enriched layer is formed at a first interface between the first dielectric layer and the semiconductor layer. Another nitrogen-enriched layer is formed at a second interface between the semiconductor layer and a second dielectric layer. Device structures may include field-effect transistors that include one, both, and/or neither of the nitrogen-enriched layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.