Patent · US Active

Transistor having a gate comprising a titanium nitride layer and method for depositing this layer

US9953837B2 · kind B2 · utility

0Cited by

9References

19Claims

0Family size

Assignee

STMicroelectronics (Crolles 2) SAS · FR

Inventors

Pierre Caubet · Le Versoud, FR
Sylvain Baudot · Dresden, DE

Key dates

Filing date	Mar 26, 2015
Grant date	Apr 24, 2018
Priority date	—
Expiry date	Mar 26, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/667
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.