Method of forming a semiconductor device structure and semiconductor device structure

US9953876B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Elliot John Smith · Dresden, DE
• Hans-Juergen Thees · Dresden, DE

Key dates

• Filing date: Sep 30, 2016
• Grant date: Apr 24, 2018
• Expiry date: Sep 30, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/013

Abstract

The present disclosure provides a method of forming a semiconductor device structure including forming a first gate stack comprising a first gate dielectric material and a first gate electrode material over a first active region in an upper portion of a substrate, forming a first spacer structure adjacent to the first gate stack, and forming first raised source/drain (RSD) regions at opposing sides of the first gate stack on the first active region in alignment with the first spacer structure. Herein, forming the first spacer structure includes forming a first spacer structure on sidewalls of the first gate stack, the first gate dielectric extending in between the first spacer and the upper surface portion, patterning the first gate dielectric material, and forming a second spacer over the first spacer and the patterned first gate dielectric material.