Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region

US9954056B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Franz Hirler · Isen, DE
• Stefan Gamerith · Villach, AT

Key dates

• Filing date: Jan 27, 2017
• Grant date: Apr 24, 2018
• Expiry date: Jan 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A semiconductor device includes a transistor cell region and a transition region. The transistor cell region includes a first portion of a super junction structure and a first contact structure electrically connecting a first load electrode with first source zones of transistor cells. The first source zones are formed on opposite sides of the first contact structure. The transition region directly adjoins to the transistor cell region and includes a second portion of the super junction structure and a second contact structure electrically connecting the first load electrode with a second source zone. The second source zone is formed only at a side of the second contact structure oriented to the transistor cell region.