Method for manufacturing silicon carbide semiconductor device
US9957638B2 · kind B2 · utility
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Key dates
| Filing date | Dec 29, 2014 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | May 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a silicon carbide semiconductor device includes: preparing a silicon carbide single crystal substrate having a flatness with an average roughness of 0.2 nm or less; gas-etching a surface of the silicon carbide single crystal substrate under an atmosphere of a reducing gas; and forming a silicon carbide layer on the gas-etched surface of the silicon carbide single crystal substrate, wherein an etching rate of the gas etching is made in a range of 0.5 μm/hour or faster to 2.0 μm/hour or slower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.