Patent · US Active

Devices with backside metal structures and methods of formation thereof

US9960076B2 · kind B2 · utility

1Cited by

0References

29Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Oliver Hellmund · Straubing, DE
Ingo Muri · Villach, AT
Johannes Baumgartl · Arnoldstein, AT
Iris Moder · Villach, AT
Thomas Neidhart · Klagenfurt, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Aug 5, 2016
Grant date	May 1, 2018
Priority date	—
Expiry date	Aug 5, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of fabricating a semiconductor device includes forming trenches filled with a sacrificial material. The trenches extend into a semiconductor substrate from a first side. An epitaxial layer is formed over the first side of the semiconductor substrate and the trenches. From a second side of the semiconductor substrate opposite to the first side, the sacrificial material in the trenches is removed. The trenches are filled with a conductive material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.