Method for forming semiconductor device
US9960167B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 16, 2017 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Aug 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/50
Abstract
A method for forming a semiconductor device includes providing a substrate having a plurality of memory cells formed therein; forming an insulating layer on the substrate; forming a plurality of openings in the insulating layer and exposing a portion of the memory cells; forming a conductive portion and a metal layer in the openings; removing a portion of the metal layer to form a plurality of first metal portions and a plurality of second metal portions that the first metal portion and the conductive portion form a first connecting structure, and the second metal portion and the conductive portion form a second connecting structure; forming a passivation layer on the first connecting structures; and forming a plurality of first storage nodes and dummy nodes on the substrate and the first storage nodes and the dummy nodes are electrically connected to the second connecting structures and the first connecting structures respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.