Semiconductor device with stripe-shaped trench gate structures and gate connector structure

US9960243B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Aichinger · Faak am See, AT
• Wolfgang Bergner · Waldbüttelbrunn, DE

Key dates

• Filing date: Nov 22, 2016
• Grant date: May 1, 2018
• Expiry date: Nov 22, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13091
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate connector structure at a distance to the first surface is electrically connected to a gate electrode in the trench gate structure. A gate dielectric separates the gate electrode from the semiconductor body. First sections of the gate dielectric outside a vertical projection of the gate connector structure are thinner than second sections within the vertical projection of the gate connector structure.