Method of densifying films in semiconductor device
US9966255B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2017 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Sep 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76837
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of densifying films, cross-linking films, and controlling the stress of films are provided herein. Methods include forming a removable film on a substrate comprising a material to be densified, and annealing the substrate to transfer stress from the removable film to the material and thereby densify the material. Some methods involve depositing a tensile capping layer on the material to be densified on a substrate and annealing the substrate at a temperature greater than about 450° C. Some methods include clamping the substrate including the material to be densified to a shaped pedestal using an electrostatic chuck to apply compressive stress to the material to be densified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.