Method of growing gallium nitride-based crystal and heat treatment apparatus
US9966258B2 · kind B2 · utility
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Key dates
| Filing date | Jan 28, 2015 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Jan 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of growing a gallium nitride-based crystal, including: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C.; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.