Method for fabricating a MIM capacitor
US9966425B1 · kind B1 · utility
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9References
14Claims
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Key dates
| Filing date | Feb 28, 2017 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Feb 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A method for fabricating a metal-insulator-metal (MIM) capacitor includes the steps of: forming a capacitor bottom metal (CBM) layer on a material layer; forming a silicon layer on the CBM layer; forming a capacitor dielectric layer on the silicon layer; and forming a capacitor top metal (CTM) layer on the capacitor dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.